Characterization and Reduction of Dislocations in

il y a 3 semaines


Grenoble, France DIAMFAB Temps plein

**Context**

At DIAMFAB, we are synthetizing diamond for the semi-conductor industry. With its superior electronic performances, efficiency and compacity, diamond-based power electronic devices could be one of the key components of the energetic transition. DIAMFAB’s expertise results from 30 years of research on diamond epitaxy at Institut Néel (CNRS). The startup, launched in 2019 has a production activity but is devoting most of its efforts on R&D.

Settled down in Grenoble, DIAMAB is composed of a young and dynamic team of 11 collaborators working in a good atmosphere. An “Agile management” is performed to favor the participation of everyone to achieve the common objectives of the company.

**Objectives**

The active layers of diodes and transistors fabricated by DIAMFAB are made of boron doped diamond deposited on commercial synthetic diamond substrates by microwave plasma assisted chemical vapor deposition (MWCVD). In the framework of its R&D activities, the startup is trying to improve the properties of its power devices by reducing the crystalline defects of the active layers and in particular, the dislocations. These could be generated during the homoepitaxy but most of them, called _primary dislocations_,are coming from the substrate and propagate toward the active layers during the growth. Among the primary dislocations, some are generated by the substrate polishing step that degrades the crystalline quality of the sub-surface region.

During this internship, the student will work in close collaboration with the R&D team of DIAMFAB. The objectives will be the following:

- Carry out a comparative study of the dislocation density in diamond substrates polished by different providers. To do so, dislocations will be revealed by a selective etching technique and the characterization will be performed by optical profilometry, scanning electron microscopy or Atomic Force Microscopy. The student can also participate to Raman spectroscopy measurement, cathodoluminescence or X-ray diffraction spectroscopy in synchrotron (ESRF)
- Develop an etching procedure of the substrate to remove the sub-surface defective while keeping a good surface roughness. Plasma etching techniques with different gas mixtures will be tested.
- Assess the effect of the developed substrate pre-treatment on the dislocation density on MWCVD active diamond epilayers.

**Profile**

The student should hold a Master 1 degree (or equivalent) in Material Science (or equivalent). Experience in clean room or some of the techniques mentioned above would be a plus. He or she should be attracted by experimental research, be rigorous, well organized, and able to adapt quickly in our multidisciplinary team to participate actively to the startup daily life.

**Informations**

Type of contract: Master 2 (or equivalent) internship

Start in 2023

Duration : 6 months
Location : Grenoble (Institut Néel)

Type d'emploi : Temps plein, Stage

Exigences linguistiques flexibles:

- Français non requis

Programmation:

- Du Lundi au Vendredi
- Travail en journée

Lieu du poste : Un seul lieu de travail



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