Post-doc - Study of Gan-based Complementary
Il y a 2 mois
Position description
**Category**:
- Engineering science
**Contract**:
- Postdoc
**Job title**:
- Post-Doc - Study of GaN-based complementary transistor architectures H/F
**Subject**:
- The postdoctoral work will focus on the development of GaN transistors with a p-FET behavior.
**Contract duration (months)**:
- 12 à 24
**Job description**:
- There is a strong interest de develop GaN-based logic for high temperatures, radiative environments or for co-integration with power transistors in order to limit parasitics in the gate-drive loop and increase device lifetime.
- HEMT-based technologies with a pGaN- or MOS- gate allow to fabricate suitable n-FETs (Field Effect Transistors with an electronic conduction channel) with current densities above 100mA/mm and an Ion/Ioff ration larger than 5 decades. The fabrication of P-FETs (with a conducting channel made-up of holes), does not allow to have as high performance due to the low mobility of holes which is more than one order of magnitude lower than that of electrons as well as the difficulty to obtain ohmic contacts on p-doped GaN with as good of properties as on n-doped GaN.
- The work that is proposed here will first consist in revisiting the architectures of the state of the art followed by the proposal of novel structures that allow to potentially obtain improved performance by using TCAD simulations (Synopsys® SentaurusTM). An experimental study of ohmic contacts on p-GaN will be conducted as well, using different metals and epitaxy stacks that could allow to foresee a CMOS compatible device integration.- The work will be lead in collaboration with experts working on device integration, electrical contact technologies on III-V materials, TCAD simulations and epitaxy.**Applicant Profile**:
- You have a PhD in microelectronics with in-depth knowledge of semiconductor device physics and GaN-based HEMTs.- You appreciate to work within a multidisciplinary team and are fluent in English.Position location
**Site**:
- Grenoble
**Job location**:
- France, Auvergne-Rhône-Alpes, Isère (38)
**Location**:
- Grenoble
Requester
**Position start date**:
- 12/06/2023
General information
**Organisation**:
The French Alternative Energies and Atomic Energy Commission (CEA) is a key player in research, development and innovation in four main areas:
- defence and security,
- nuclear energy (fission and fusion),
- technological research for industry,
- fundamental research in the physical sciences and life sciences.
Drawing on its widely acknowledged expertise, and thanks to its 16000 technicians, engineers, researchers and staff, the CEA actively participates in collaborative projects with a large number of academic and industrial partners.
- The CEA is established in ten centers spread throughout France**Reference **:2023-27179**Description de l'unité**:
- A Grenoble, au centre des Alpes, le LETI est un institut de recherche appliquée en micro et nano technologies, technologies de l'information et de la santé. Interface privilégiée du monde industriel et de la recherche académique, il assure chaque année le développement et le transfert de technologies innovantes dans des secteurs variés via des programmes de recherche utilisant nos plateformes technologiques.
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