Diamond Mesfet Fabrication and Characterization
il y a 3 semaines
DIAMFAB is an innovative startup that develops synthetics diamond-based solutions for power electronics and/or electronic devices working in extreme conditions. The unique know-how of DiamFab relies on 30 years of research work led by the Institut Néel - CNRS on diamond doped epitaxial layers and device fabrication and characterization. In fact, diamond have all the requirement to be the next semiconductor for a more efficient power electronics. Today, DIAMFAB is composed of 11 collaborators, and it is looking for an internship student to joint is _device R&D_ team in order to keep its technological advantage. During this internship, the focus will be made on a particular device: MESFET transistor. It is a unipolar transistor with a gate (G) is made with a Schottky contact (fig. 1). This transistor has interesting characteristics such as a breakdown voltage below 3kV and low threshold voltage, however work must be done to increase the current in the ON state.
**Mission**
The intern will work in collaboration with the DIAMFAB device R&D team on MESFET fabrication and characterization produce on our diamond wafer. Proof of concept have already been realized and work will be dedicated to improving the MESFET characteristics, to do so a new technological brick will be implemented.
Your mission, will be to participate to the conception, the fabrication and the characterization with a probe station. Once characterized the collected data should be treated and analyzed to determine important parameters.
**Profile**
**Information**
Offer types and contract length: Master 2 internship, 6 months minimum
Starting: February2023
Where: Grenoble
Type d'emploi : Temps plein, Stage
Exigences linguistiques flexibles:
- Français non requis
Programmation:
- Du Lundi au Vendredi
- Travail en journée
Lieu du poste : Un seul lieu de travail
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