Modelling and Characterization of Reconfigurable

Il y a 2 mois

Brest, France Lab-STICC Temps plein

**Modelling and Characterization of reconfigurable microwave components using integrated junctions on semi-conductor substrate**:

- Réf
- **ABG-112641**
- Sujet de Thèse- 29/03/2023- Contrat doctoral- Lab-STICC- Lieu de travail- Brest - Bretagne - France- Intitulé du sujet- Modelling and Characterization of reconfigurable microwave components using integrated junctions on semi-conductor substrate- Champs scientifiques- Télécommunications
- Electronique
- Mots clés- PIN diodes, Reconfigurable antenna, reconfigurable filter, semi-conductor junctions, silicon, switch, varactor diodes**Description du sujet**:
Abstract:
Given the proliferation of standards in telecommunication systems, tunability is
becoming a priority both in terms of integration and cost. A single tunable system needs to be
able to work according to several standards. Therefore, two solutions appear to the designer,
the first one is to multiply the number of components (such as filter or antenna) by the standards
or the second one is to use tunable devices.
Therefore, the microwave devices flexibility is a priority because it allows to
miniaturize the systems size and to reduce the manufacturing cost. A tunable function
(filter or antenna) in planar technology is a passive distributed device to which some active
tunable elements are soldered. At least one characteristic of the device can therefore be varied
(the central frequency and/or the bandwidth in the case of a filter; or the resonant frequency,
the radiating pattern or the polarization mode in the case of an antenna).
Nowadays, it exits many solutions to make tunable devices but the use of semicondutors
components soldered on a low losses dielectric substrate predominates and this for many
reasons such as the commutation time, the bias voltage, the well-mastered manufacturing
process and the electrical performances. Because passive devices are distributed in order to
propagate the electromagnetic wave, they are often designed on a dielectric substrate to
minimize losses. However, the addition of the tunable elements causes some additional losses
and disturbances (some parasitic effects can arise due to the packaging or the interconnection
and discontinuities between active and passive parts). Finally, these tunable functions reduce
the flexibility of the design (because of the size and localization of the active tuning elements)
and manufacturing (because of drilling and via metallization).
A novel and innovative solution to co-design tunable microwave devices (such as
switches, tunable filters, reconfigurable antennas ) has been developed [1]-[6]. The co-design
method makes possible to build both the tunable element and the passive distributed component
on the same silicon substrate. With a bias voltage, the tunable element which is an N+PP+
junction, acts as an ON / OFF switches and makes an electrical short circuit in the substrate
thickness. Thanks to the semiconductors properties, this co-design between the passive and
active parts allows to integrate the active element in the substrate, removing the constraints
related to the tuning elements and drilling of via holes. In a same design flow, this co-design
permits to optimize the microwave function in terms of size and quality factor. The concept
permits to choose the doped areas size, position and shape to offers a greater flexibility in the
tunable devices design.
Nowadays, in terms of modelling, it exits on one hand some solutions to simulate the
electrical behavior of the semiconductors junctions and on the other hand, some solutions to
predict the electromagnetic behavior of the microwave devices. However, the size difference
between the active and the passive components gives some difficulties to simulate a global
tunable function. Therefore, to overcome this problem, a co-simulation solution has been
proposed based on a weak coupling between the electrical simulations of the active element
and the electromagnetic simulations.
Based on the innovative method of co-designing tunable microwave functions, the thesis
work will make it possible to propose new solutions for accurate co-simulation combining
charge transport of semiconductor junctions and global electromagnetic behavior of
devices. Based on the concepts demonstrated by previous works, the work will also consist in
characterizing tunable components, such as switches, firstly in terms of power handling,
switching time and non-linearities, and this according to the size and shapes of the doped zones
as well as the thicknesses of the substrates and the types of junctions. Then, based on the first
results, more complex tunable components will be considered in order to improve the
performance of these devices (reduction of the losses of the passive function, improvement of
the quality factor of the active elements, improvement of the power handling, etc. ). Finally, the
degrees of freedom related to this co-design will make it possible to propose new topologies of
mi

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