Post-doc : Characterization of High-k
il y a 6 jours
**POST-DOC : Characterization of high-k dielectric/silicon interfaces using second harmonic generation (SHG)**:
- Réf **ABG-127174**
- Sujet de Thèse- 25/11/2024- Autre financement public- Grenoble INP/CROMA- Lieu de travail- Grenoble - Auvergne-Rhône-Alpes - France- Intitulé du sujet- POST-DOC : Characterization of high-k dielectric/silicon interfaces using second harmonic generation (SHG)- Champs scientifiques- Sciences de l’ingénieur
- Physique
- Mots clés- dielectric - semiconductor interfaces, semiconductor devices, non-linear optics**Description du sujet**:
- Within the IPCEI (Important Project of Common European Interest) on Microelectronics, we work (in collaboration with STMicroelectronics) on the development of a non-destructive characterization method adapted for interfaces between passivation high-k dielectrics and silicon. The method, based on nonlinear optics, consist in measuring the second harmonic generated (SHG) in the sample; for centrosymmetric materials, this signal is mainly due to the electric field present at the interface, which is related to interface trap density (Dit) and fixed charges in the oxide (Qox)[1]. The post-doc will be in charge of development of protocols to identify and separate the two contributions. One of the methods exploited consists in adding an external electric field during the SHG measurement, which should modify the Dit response. Starting from industrial wafers with high-k dielectrics on silicon, a transparent conductive layer must be deposited to fabricate MOS capacitors with a transparent gate that are adapted for both SHG under external voltage and capacitance versus gate voltage measurements. A wide panel of samples are available and many experimental parameters (e.g., laser power, input and output wave polarisations, external electric field) can be varied. The experimental methodology will be completed by simulation segments on our home-made simulator[2] that allows calculating the SH generated in a certain multilayer. In the second part of the year, the aim will be to upgrade the experimental tool by replacing the control computer and re-validate that all the automatization elements are working properly.- **Prise de fonction**:
- 06/01/2025**Nature du financement**:
- Autre financement public**Précisions sur le financement**:
**Présentation établissement et labo d'accueil**:
- Grenoble INP/CROMAThe Centre for Radiofrequencies, Optic and Micro-nanoelectronics in the Alps (previously IMEP-LaHC) is a « Unité Mixte de Recherche UMR 5130 » (CNRS / Grenoble INP / UGA / Université Savoie Mont Blanc) of 110 people strongly committed in research activities related to micro and nano-electronics, microphotonics, micro and nano-systems, microwaves and microwave-photonics.
Research activities of CROMA cover large areas (materials, technologies, components, circuits and systems) which allow carrying out multidisciplinary research in common with our partners in nanophysics, material chemistry, circuit designers or system manufacturers in electronics and optoelectronics.
**Site web**:
- A PhD in optoelectronics/semiconductors physics- A good level in English and/or French- Willing to progress, self-motivation, autonomy- Good interpersonal skills.-
- 08/12/2024
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Characterization of Dielectric/silicon Interfaces
il y a 6 jours
Grenoble, France Grenoble INPCROMA Temps plein**Characterization of dielectric/silicon interfaces using second harmonic generation**: - Réf **ABG-127179** - Stage master 2 / Ingénieur- Durée 6 mois- Salaire net mensuel ~500 euros- 25/11/2024- Grenoble INP/CROMA- Lieu de travail- Grenoble Auvergne-Rhône-Alpes France- Champs scientifiques- Sciences de l’ingénieur - Physique - Mots clés-...
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