Characterization of Dielectric/silicon Interfaces

il y a 2 jours

Grenoble, France Grenoble INPCROMA Temps plein

**Characterization of dielectric/silicon interfaces using second harmonic generation**:

- Réf **ABG-127179**
- Stage master 2 / Ingénieur- Durée 6 mois- Salaire net mensuel ~500 euros- 25/11/2024- Grenoble INP/CROMA- Lieu de travail- Grenoble Auvergne-Rhône-Alpes France- Champs scientifiques- Sciences de l’ingénieur
- Physique
- Mots clés- dielectric on semiconductor intefaces, semiconductor devices, non-linear optics-
- 13/12/2024**Établissement recruteur**:
**Site web**:
The Centre for Radiofrequencies, Optic and Micro-nanoelectronics in the Alps ( previously IMEP-LaHC ) is a « Unité Mixte de Recherche UMR 5130 » (CNRS / Grenoble INP / UGA / Université Savoie Mont Blanc) of 110 people strongly committed in research activities related to micro and nano-electronics, microphotonics, micro and nano-systems, microwaves and microwave-photonics.

Research activities of CROMA cover large areas (materials, technologies, components, circuits and systems) which allow carrying out multidisciplinary research in common with our partners in nanophysics, material chemistry, circuit designers or system manufacturers in electronics and optoelectronics.

**Description**:

- A novel method to achieve non-destructive electrical characterization of interfaces using second harmonic generation (SHG) is currently under active development at the laboratory, within a collaboration with STMicroelectronics. This technique has passed the demonstration stage, but in order to be used as an in-line metrology tool in the industry, it needs to prove its ability to distinguish and quantify two different electrical properties of the interfaces: the trap density and the fixed charges. In order to provide this functionality, a calibration procedure of the raw results from SHG measurement must be developed and it is the aim of the internship. The calibration procedure will be obtained by characterizing simple stacks using both SHG and other established characterization methods such as capacitance - voltage (C-V) measurements.- During the internship, the work will include:
- Understanding theoretical aspects: second harmonic generation, electric field distribution in semiconductor structures, charges and defaults at the interface between dielectric and semiconductor materials.
- Using SHG characterization tool available at CROMA to test simple stack structures under different configurations (influence of the laser power, influence of the substrate bias,)
- Develop a model to fit the experimental curves.
- Compare the SHG measurement with CV measurements in order to provide a method to separate traps and fixed charges densities from SHG measurements.

**Profil**:
**Prise de fonction**:

- 03/02/2025

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