Exploring new spin defects in two dimensional semiconductors

Exploring new spin defects in two dimensional semiconductors // Exploring new spin defects in two dimensional semiconductors

Réf ABG-135040

ADUM-68410

Sujet de Thèse

13/01/2026

École polytechnique

Lieu de travail

Palaiseau Cedex - Ile-de-France - France

Intitulé du sujet

Exploring new spin defects in two dimensional semiconductors // Exploring new spin defects in two dimensional semiconductors

Mots clés

2d materials, spin, semiconductors

2d materials, spin, semiconductors

Description du sujet

One of the most active research areas in condensed matter physics today focuses on the electronic and optical properties of atomically thin semiconductors, a field that rapidly emerged following the discovery of graphene in 2004. In recent years, studies have largely concentrated on the intrinsic excitonic properties of monolayers such as MoS₂ and WSe₂, which display remarkable light–matter coupling and rich excitonic physics.

More recently, individual defects in these materials have attracted considerable attention because they can act as single-photon emitters, enabling the precise localization of optical centers within a single atomic layer. A key open question for quantum applications is whether such defects can host optically addressable spin states, similar to NV centers in diamond but this time embedded within a 2D surface.

Very recently, it has been demonstrated that thin layers of germanium disulfide (GeS₂) exhibit spin-defect-related emission that remains detectable at room temperature. Owing to the atomic-scale thickness of these materials and the extreme sensitivity of spin defects to local electromagnetic fields, temperature, and strain, they hold great promise for quantum sensing applications that operate in close proximity to the target system.

In this project, the PhD candidate will:

• Fabricate 2D materials from bulk crystals using our mechanical exfoliation setup,
• Create spin defects with controlled density through high-temperature annealing, and
• Characterize their spin properties at room and cryogenic temperatures under different conditions by using optical detection of spin resonance (ODMR).

The ultimate goal is to isolate single spin defects and demonstrate long spin coherence times. This project is an experimental one, and is ideally suited for a student with an interest in fundamental semiconductor physics, 2D materials, and quantum technologies.

One of the most active research areas in condensed matter physics today focuses on the electronic and optical properties of atomically thin semiconductors, a field that rapidly emerged following the discovery of graphene in 2004. In recent years, studies have largely concentrated on the intrinsic excitonic properties of monolayers such as MoS₂ and WSe₂, which display remarkable light–matter coupling and rich excitonic physics.

More recently, individual defects in these materials have attracted considerable attention because they can act as single-photon emitters, enabling the precise localization of optical centers within a single atomic layer. A key open question for quantum applications is whether such defects can host optically addressable spin states, similar to NV centers in diamond but this time embedded within a 2D surface.

Very recently, it has been demonstrated that thin layers of germanium disulfide (GeS₂) exhibit spin-defect-related emission that remains detectable at room temperature. Owing to the atomic-scale thickness of these materials and the extreme sensitivity of spin defects to local electromagnetic fields, temperature, and strain, they hold great promise for quantum sensing applications that operate in close proximity to the target system.

In this project, the PhD candidate will:

• Fabricate 2D materials from bulk crystals using our mechanical exfoliation setup,
• Create spin defects with controlled density through high-temperature annealing, and
• Characterize their spin properties at room and cryogenic temperatures under different conditions by using optical detection of spin resonance (ODMR).

The ultimate goal is to isolate single spin defects and demonstrate long spin coherence times. This project is an experimental one, and is ideally suited for a student with an interest in fundamental semiconductor physics, 2D materials, and quantum technologies.

Début de la thèse : 01/10/2026

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Nature du financement
Précisions sur le financement

Appel anticipé*Concours IPP ou école membre*Allocation doctorale AMX*

Présentation établissement et labo d'accueil

École polytechnique

Etablissement délivrant le doctorat

École polytechnique

Ecole doctorale

626 Ecole Doctorale de l'Institut Polytechnique de Paris

Profil du candidat

Le(a) candidat(e) devra avoir des connaissances solides en physique quantique et, idéalement, sur la physique des semi-conducteurs. Le candidat doit apprécier le défi pratique de faire fonctionner une expérience, et toute expérience préalable dans les mesures optiques ou en microscopie tunnel serait un gros avantage. Des connaissances en analyse des données avec Python ou Origin sont recommandées.

The PhD candidate should have a strong background in quantum physics and, ideally, in semiconductor physics. The candidate shoul denjoy the practical challenge of making an experiment work, and any prior experience in optical measurements or with scanning tunneling microscopy would be a big advantage. Skills in data treatment using Python and/or origin are strongly recommended.

Date limite de candidature

28/02/2026

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