Post-doctoral position H/F

Informations générales

Entité de rattachement

Le CEA est un acteur majeur de la recherche, au service des citoyens, de l'économie et de l'Etat.

Il apporte des solutions concrètes à leurs besoins dans quatre domaines principaux : transition énergétique, transition numérique, technologies pour la médecine du futur, défense et sécurité sur un socle de recherche fondamentale. Le CEA s'engage depuis plus de 75 ans au service de la souveraineté scientifique, technologique et industrielle de la France et de l'Europe pour un présent et un avenir mieux maîtrisés et plus sûrs.

Implanté au cœur des territoires équipés de très grandes infrastructures de recherche, le CEA dispose d'un large éventail de partenaires académiques et industriels en France, en Europe et à l'international.

Les collaboratrices et collaborateurs du CEA partagent trois valeurs fondamentales :

• La conscience des responsabilités

• La coopération

• La curiosité

Référence

Description de l'unité

The Fundamental Research Department conducts outstanding research in the fields of physics, chemistry, biology, climate and environmental sciences. The position is located at the Institut Rayonnement Matière de Saclay (IRAMIS) in the Service de Physique de l'Etat Condensé (SPEC). IRAMIS carries out research in physics and chemistry, at the crossroads of academia and the CEA's missions, as well as societal issues and innovation.
The Service de Physique de l'Etat Condensé (SPEC) is a CEA-CNRS joint research unit with a staff of around 160, conducting multidisciplinary research in condensed matter, from quantum physics to complex systems.
SPEC conducts research in many areas of fundamental physics.

Domaine

Physique de l'état condensé, chimie et nanosciences

Contrat

Post-doctorat

Intitulé de l'offre

Post-doctoral position H/F

Sujet de stage

Dopant and Defect Physics for Device Optimization for Hafnium Oxide based Devices

Durée du contrat (en mois)

12

Description de l'offre

Devices realized with ferroelectric hafnium oxide are silicon compatible, power-efficient, and can be cost-effectively integrated into advanced technology nodes for sensor, nonvolatile memory, logic, and neuromorphic applications. Currently, hafnium-zirconium mixed oxide (HfxZr1-xO2) offers the widest stoichiometry window for fabricating ultrathin ferroelectric films with large remanent polarization.

Still, the film requires oxygen vacancies to stabilize the ferroelectric phase and has reliability issues. An alternative could be to start from stoichiometric, quasi-vacancy-free hafnia and use suitable dopants to optimize the ferroelectric properties.

We will explore the influence of the dopant modulated atomic and electronic structure on the ferroelectric properties. The chosen materials will be optimized by successive simulation, processing, and characterization iterations and integrated into scaled arrays to provide statistically significant results on ferroelectric capacitor performance.

The post-doctoral research will give a better understanding of the influence of dopants on local chemistry, electronic structure, phase composition, and their effects on material and ferroelectric parameters, including recrystallization temperature and remanent polarization.

The work will be done by employing a range of static and operando experiments on bare films and electrode/film interfaces (HAXPES, XPS, PFM, PEEM, XRD) in both laboratory and synchrotron environments.

Operando experiments will correlate device endurance with material physical properties and electrical characterization will be carried out.

The post-doctoral research will give a better understanding of the influence of dopants on local chemistry, electronic structure, phase composition, and their effects on material and ferroelectric parameters, including recrystallization temperature and remanent polarization.

The work will be done by employing a range of static and operando experiments on bare films and electrode/film interfaces (HAXPES, XPS, PFM, PEEM, XRD) in both laboratory and synchrotron environments. Operando experiments will correlate device endurance with material physical properties and electrical characterization will be carried out.

The results will be compared with ab initio calculations and will provide input for physical models based on real devices to predict key metrics such as wake-up, endurance, retention, leakage, and breakdown using vacancy-free doped hafnia.

The D3PO project is a Franco-German collaboration between the CEA, NaMLAb (Dresden) and the Technische Hochschule München, jointly funded by the ANR and the DFG.

Profil du candidat

Site

Saclay

Localisation du poste

France, Ile-de-France

Ville

SACLAY

Disponibilité du poste

01/11/2023

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