Development of Epitaxial Ga2o3 Thin Films for Next

Il y a 2 mois


Grenoble, France Université Grenoble Alpes Temps plein

**Development of Epitaxial Ga2O3 Thin Films for Next Generation Power Electronics**:

- Réf
- **ABG-115622**
- Sujet de Thèse- 04/07/2023- Contrat doctoral- Université Grenoble Alpes- Lieu de travail- Grenoble - Auvergne-Rhône-Alpes - France- Intitulé du sujet- Development of Epitaxial Ga2O3 Thin Films for Next Generation Power Electronics- Champs scientifiques- Matériaux

**Description du sujet**:

- The demand for power electronic devices keeps increasing due to the rapid development of industries related to electricity, automotive and consumer electronics. In order to meet this demand, the use of wide bandgap semiconductors such as diamond, aluminum nitride or gallium oxide (Ga2O3) has emerged as a potential avenue for development. Among these materials, β-phase Ga2O3 has many advantages, such as an ultra-wide bandgap energy (4.6-4.9 eV), a particularly high breakdown electric field (» 8 MV/cm) as well as a decent electron mobility (» 250 cm2/Vs). In addition, the availability of large and reasonable-cost Ga2O3 substrates makes it possible to consider this semiconductor as building block for next-generation power devices.- The objective of the PhD thesis will consist in developing the growth of epitaxial Ga2O3 thin films by comparing two complementary chemical deposition techniques, namely i) chemical bath deposition using a home-made reactor operating at low temperature and ii) pulsed liquid injection metalorganic chemical vapor deposition using a semi-industrial reactor operating at high temperature. A wide range of morphological and structural characterization techniques will be used, including scanning and transmission electron microscopy, X-ray diffraction, and Raman spectroscopy, to finely assess and optimize the formation mechanisms of thin films involved, their structural quality, as well as the interface properties with the substrate. The optical and electrical properties of Ga2O3 thin films will be further characterized by optical absorption, cathodoluminescence, Fourier Transform infrared spectroscopy, I-V, C-V, deep level transient spectroscopy, and photoconductivity measurements. Finally, the possibility to integrate Ga2O3 thin films into dedicated transistors for power electronics will be considered.**Prise de fonction**:

- 01/10/2023**Nature du financement**:

- Contrat doctoral**Précisions sur le financement**:

- CDP POWER ALPS (IDEX UGA)**Présentation établissement et labo d'accueil**:

- Université Grenoble Alpes-
**Site web**:
**Intitulé du doctorat**:

- Doctorat de Science & Génie des Matériaux**Pays d'obtention du doctorat**:

- France**Etablissement délivrant le doctorat**:

- Université Grenoble Alpes- 28/07/2023


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