Sub-Ns X-ray Diffraction Imaging for Microelectronics
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The European Synchrotron Radiation Facility invites applications for a PhD thesis position in Sub Nanosecond Imaging of Operating Microelectronic Devices by X-ray Diffraction Microscopy at ID01. The project aims to image lattice strain in SiGe(Sn) devices under realistic operation, advancing 3D strain-temperature imaging at the diffraction microscope setup.
The successful candidate will join the ID01 team, collaborate with European semiconductor groups, and develop experimental techniques and
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France, Auvergne-Rhône-Alpes European Synchrotron Radiation Facility Temps plein 18 000 € - 25 000 € ContratThe European Synchrotron Radiation Facility invites applications for a PhD thesis position in Sub Nanosecond Imaging of Operating Microelectronic Devices by X-ray Diffraction Microscopy at ID01. The project aims to image lattice strain in SiGe(Sn) devices under realistic operation, advancing 3D strain-temperature imaging at the diffraction microscope...