SiC Power Devices: Cosmic-Ray Robustness Engineer

Il y a 4 semaines

Arrondissement de Tours, Centre-Val de Loire, France STMicro Temps plein

STMicroelectronics seeks a research-focused engineer to advance silicon carbide device modeling and cosmic-ray robustness for power electronics. The role involves defining models for cosmic-ray simulations and validating diode structures in collaboration with CNES.

You will work on simulating new diode structures, studying reverse characteristics of damaged diodes, and exploring high-voltage device applications for space, automotive, and smart-grid systems.

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