Sub-30 nm sample preparation and limited-angle STEM tomography H/F

Il y a 2 jours

Grenoble, Auvergne-Rhône-Alpes, France CEA Temps plein
Position description Category Intrumentation, metrology and control Contract Internship Job title Sub-30 nm sample preparation and limited-angle STEM tomography H/F Subject Prepare sub-30-nm FIB lamellae and use limited-angle STEM tomography to reduce projection effects in nanoscale semiconductor devices. Contract duration (months) 6

Job Description
As semiconductor devices become smaller and more complex, structural information from 2D STEM images becomes harder to interpret because projection effects and overlapping features through conventional FIB lamellae can obscure nanoscale structures. The internship will improve both sample preparation and STEM characterization. Lamellae thinner than 30 nm will be prepared using FIB milling followed by low-energy argon-ion polishing. Limited-angle electron tomography will then reconstruct the central slice of the FIB lamella to reduce projection effects. The results will be compared with a full 3D volume reconstructed using deep-learning approaches. Methods / Means Electron microscopy (FIB-SEM, STEM), deep-learning approaches Applicant Profile Master 2 in materials science, physics or equivalent, with programming skills. Position location Site Grenoble Job location France Location Grenoble Candidate criteria Prepared diploma Bac+5
- Master 2 Recommended training Materials science, physics PhD opportunity Oui Requester Position start date 01/03/2027